Technology
Picophotonics laser technology is based on an in-house semiconductor saturable absorber technology (SESAM) used as
passive Q-switch in microchip lasers. Microchip architecture supports compact footprint, scalable production as well as enables shock resistant geometry.
Use of the proprietary SESAM technology enables significant pulse width reduction, and repetition rate increase up to MHz region, while keeping temporal and spectral properties of the laser.
With master oscillator power amplifier (MOPA) configuration, we are able to scale pulse peak power up to 100 kW level.
Our lasers are covered in three platforms: microchip platform for OEM seed lasers, S-platform for the microchip lasers as turn-key devices and P-platform with integrated amplifier system, scaling power up to Watt level.
Microchip-platform
- Most compact laser platform
- Offering microchip seeder as a component
- Tailorable optical and mechanical properties
- Low power consumption and shock resistant structure
Available products
S-platform
- Integrated compact driver system
- Free-space or fiber coupled output
- Nanosecond pulse durations at 1535 nm in a very compact package.
- Picosecond pulses at 1064 nm and 532 nm
- Dynamically tunable pulse repetition rate
Available products
P-platform
- Master oscillator power amplifier configuration
- Offering independent power and repetition rate tunability dynamically
- Integrated PIPCB -driver system
- Optical or electrical trigger out signal
- Free-space or fiber coupled output
- Up to 10 µJ pulse energy at 1064 nm and 5 µJ at 532 nm
Available products
In comparison to pulsed diode lasers and mode-locked fiber lasers, our technology can offer a unique combination of output parameters:
The narrow spectral width and high peak power enable efficient single-pass conversion to 532 nm, 355 nm and 266 nm, simply by cascading appropriate stages of frequency-conversion.
Other wavelengths, such as 573 nm, 620 nm, 1240 nm, 1485 nm, 1852 nm, etc. can also be obtained by pumping a Raman-laser with the sub 100 ps pulses. The Raman laser can be formed simply of a thin monolithic piece of diamond with appropriate coatings. (Vol. 25, No. 24 | 27 Nov 2017 | OPTICS EXPRESS 3036, and Sub-100 ps monolithic diamond Raman laser emitting at 573 nm. IEEE Photonics Technology Letters, 30(11), 981-984. DOI: 10.1109/LPT.2018.2806183). Both nonlinear frequency-conversion and Raman conversion will shorten the pulse width.